Power
Alpha & Omega enter IGBT market with 600V IGBT family
AOS today released its first family of high efficiency 600V Insulated Gate Bipolar Transistors in AlphaIGBT technology to address the growing need for energy efficient devices targeting motor control and power conversion applications.
AOSAOS’s AlphaIGBT products offer 2.5 times lower turn-off switching loss (EOFF) and 2 times higher short circuit withstand time (SCWT) rating compared to the current leading competition device with similar VCE(SAT) values. The ultra low gatecharge (Qg) of AlphaIGBT makes the devices incredibly easy to drive. In addition, the low QGC/QGE ratio allows the devices to withstand higher dV/dt transients and prevents oscillation issues in bridge applications. Combined with the 5.6V VGE(TH), a
feature that can be used as an advantage to extend the use of unipolar (0-15V) gate drives saving the expense and complexity of bipolar (-15/15V) gate drives. The positive temperature coefficient of VCE(SAT) and low overall gate charge characteristics of AlphaIGBT technology allow designers to easily parallel more devices and, or larger devices with existing drive circuits.
“After successfully establishing its position in the low-voltage to high-voltage MOSFET markets with best-in-class products, AOS is now ready to open a new chapter by offering superior IGBT products,” said Yalcin Bulut, Vice President of Discrete Product Lines at AOS. “With an expertise in device physics and deep system and application knowledge, AOS is raising the bar for IGBT performance as well.”
Technical Highlights
##IMAGE_2_C##