All-SiC power module achieves efficiencies over 98%

The module allows systems designers to realise lighter weight systems that are up to 67% smaller by achieving efficiencies of over 98% and improvements in power density of up to 10 times compared to systems built with silicon-based technologies.

The 2015 acquisition of Arkansas Power Electronics International (APEI) brought technical expertise resulting in half bridge configurations, delivering 325A at 1,200V, capable of the perfrmance required for industrial and EV applications, explained Paul Kierstead, director of marketing, SiC Power Products, Wolfspeed. 

Compared to conventional silicon IGBT power modules, or even previous-generation SiC MOSFET modules, this version is claimed to offer significantly higher power density for applications in which volume and weight are critical limitations. Operating at up to 100kHz, it reduces the number and size of magnetic and passive components required in a system. Thermal characteristics of SiC devices, along with the packaging design and materials, enable the module to operate at +175°C, making it suitable for aerospace and automotive applications, as well as some particularly demanding industial applications.

The module design produces a 66% reduction in module inductance, to 5.5nH, compared to 15nH in competing products. This enables faster switching speeds, higher frequency operation and ultra-low losses.

Available as part number CAS325M12HM2, the power module is configured in a half-bridge topology comprised of seven 1.2kV 25mΩ C2M SiC MOSFETs and six 1.2kV 50A Z-Rec Schottky diodes. There is a companion gate driver (CGD15HB62LP) designed for integration with the module to fit within the 62mm mounting footprint. An engineering evaluation kit that includes both the module and the gate driver is also available for design engineers to quickly and easily test the performance of the new device in systems.