Active bridge solution targets PoE-based IoT devices

Advanced GreenBridge technology is compliant with the IEEE 802.3at standard and has up to 10 times lower power dissipation than Schottky diodes. This superior thermal performance allows designers to reduce or eliminate heat sinks to simplify their product design, decrease BoM costs and shrink PCB size.

Suman Narayan, Vice President, intelligent power FET division, Fairchild, commented: “Dealing with heat has always been a critical design challenge, but even more so with these new generations of IoT devices that require 25.5W or more. The leading edge MOSFET technology in our latest GreenBridge devices help designers eliminate excessive heat and achieve key system design goals, including higher efficiency, ensuring standards compliance and decreasing overall size and reducing costs."

The extremely low conduction losses of the next-gen GreenBridge series are another important advantage as power and voltage must be maximised for the limited input power of POE systems. The GreenBridge series has best-in-class Rds_ON performance with 47% lower conduction losses compared to its closest competitor due to the power conversion efficiency of its optimised PowerTrench MOSFET technology.

The small size of GreenBridge devices also makes them suited for new POE-based devices that need to be smaller than previous generations. At just 4.5x5mm, the GreenBridge devices incorporate four MOSFETs in an MLP package connected in a full bridge. Further complementing their small size, the GreenBridge devices do not require an external driver, saving additional PCB space.

The FDMQ8205 is available in production quantities.