Power
Power Integrations revs up motor-drive offering
Power Integrations has enhanced its hardware-software bundle for brushless DC motors (BLDC) with the introduction of BridgeSwitch-2.
WeEn Semiconductors releases advanced SiC technologies with TSPAK packaging
New families of silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in TSPAK packaging are being premiered by WeEn Semiconductors at PCIM Europe in Nuremberg (June 11-13).
Magnachip releases PMIC
Magnachip Mixed-Signal (MMS) has announced the release of a multi-functional Power Management Integrated Circuit (PMIC) and a multi-channel level shifter to regulate various voltages and signals within display panels in IT devices.
PCIM: NOVOSENSE unveils automotive LED driver
A new 16/24-channel driver IC for automotive LED applications is being demonstrated by NOVOSENSE Microelectronics at PCIM Europe 2024 in Nuremberg (June11-13).
SemiQ debuts 1700V SiC Schottky discretes at PCIM
SemiQ has added 1700V SiC Schottky discrete diodes and dual diode packs to its QSiC product line.
ICeGaN GaN power ICs enable high efficiency levels for data centres
Cambridge GaN Devices (CGD) has launched its lowest ever on-resistance (RDS(on)) parts.
ROHM unveils new SiC products and vision for the future at PCIM 2024
At PCIM 2024, ROHM unveiled its new SiC product offerings as well as outlined its vision for the future. Leading the conversation was Dr. Kazuhide Ino, Managing Executive Officer & Head of Power Device Business at ROHM.
ROHM’s new TRCDRIVE pack with 2-in-1 SiC moulded module
ROHM has developed four models as part of the TRCDRIVE pack series with 2-in-1 SiC moulded modules (two 750V-rated: BSTxxxD08P4A1x4, and two 1,200V-rated: BSTxxxD12P4A1x1) optimised for electric vehicle (xEV) traction inverters.
Qorvo revolutionises circuit breakers
Qorvo announced the industry's first 4 milliohm silicon carbide (SiC) junction field-effect transistor (JFET) in a TOLL package.
TMS320F28388D by Texas Instruments
The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.