Power

At electronica 2024, Pulsiv, a Cambridge-based innovator in power electronics, has become the first company to deliver 240W from a single USB-C port. This achievement combines Pulsiv OSMIUM front-end technology with an industry-standard flyback design, passing stringent EMC and line current requirements. The development is set to transform global charging markets.

The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R DS(on)

ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals.

With applications in personal electronics, automotive, industrial and enterprise systems, USB Type-C (USB-C) is an industry-standard connector that enables the transmission of both data and power on a single interface.

Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability.

Cambridge GaN Devices (CGD) and IFPEN have developed a demo which confirms the suitability of CGD’s ICeGaN 650V GaN ICs in a multi-level, 800 VDC inverter.

NXP Semiconductors has unveiled what it says is an industry-first wireless battery management system (BMS) solution with Ultra-Wideband (UWB) capabilities.

STMicroelectronics has extended the STSPIN32 series of integrated motor drivers, adding eight new products to tackle cost-sensitive yet performance-hungry applications including power tools, home appliances and industrial automation.

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection and flexible Miller-clamp architecture.

eInfochips has announced its expanded collaboration with NXP Semiconductors to help accelerate the development of industrial high-voltage battery energy storage systems.