Power
Navitas announces new Gen-3 ‘Fast’ SiC in robust TOLL package
Navitas Semiconductor has extended its new portfolio of Gen-3 ‘Fast’ (G3F) 650 V SiC MOSFETs into a thermally-enhanced, rugged, high-speed, surface-mount TOLL (Transistor Outline Leadless) package designed for demanding, high-power, high-reliability applications.
Infineon introduces new CoolGaN Drive product family
Infineon has expanded its GaN portfolio with the CoolGaN Drive product family of integrated single switches and half-bridges with integrated drivers.
Breaking the mold: How a new magnetic packaging technology will reshape the future of power modules
A global team of TIers persisted through challenges to develop the new MagPack packaging technology for power modules, a breakthrough that will help advance the future of power design
Top 5 power products in July
Electronic Specifier takes a look at the top 5 power products to have been released in July 2024.
TTI Europe offers 600V SiHR080N60E E Series MOSFETs
TTI Europe is now stocking Vishay’s fourth-generation 600V SiHR080N60E E Series power MOSFETs. Available in the new PowerPAK 8 x 8LR package, the device provides high efficiency and power density for telecom, industrial, and computing applications.
Magnachip unveils its first 8th-generation MXT LV MOSFET
Magnachip has announced the release of its 8th-generation MXT LV MOSFET for smartphone battery protection circuits.
TMCS1123EVM by Texas Instruments
The TMCS1123EVM evaluation module (EVM) is intended to facilitate rapid, convenient use of the TMCS1123, an isolated Hall-effect precision current sense monitor using an internal ratiometric reference.
How GaN is revolutionising power supply design
Gallium Nitride (GaN) is presently in a position that will see it, alongside Silicon Carbide (SiC), revolutionise power supply design as a whole, moving away from traditional purely silicon (Si)-based analogue designs. So how is this design revolution happening, and where is GaN having the most impact?
Magnachip release 1200V IGBT in TO-247PLUS package
Magnachip has announced the completion of the development of its 1200V 75A Insulated Gate Bipolar Transistor (IGBT) in a TO-247PLUS package, designed for solar inverters. The Company plans to start mass production in October this year.
ISOM8711DFFR by Texas Instruments
The ISOM871x devices are single-channel opto-emulators with diode-emulator inputs and digital outputs. The devices are pin-compatible and drop-in replaceable for many traditional optocouplers, allowing enhancement to industry-standard packages with no PCB redesign.