6th Generation IGBT Modules from Mitsubishi Electric

For 1200V modules a VCE(sat) value of 1.7V (typ.) at Tj = 125°C and a wide SOA at Vcc = 900V are achieved. For 1700V modules: VCE(sat) = 2.2V (typ.) at Tj = 125°C, SOA at Vcc = 1200V. The newly developed fast recovery Free-Wheel Diode (FWDi) improves the trade-off between forward voltage (VF) and recovery switching loss Erec.

With the new IGBT chip generation, more than 10µs short circuit capability and excellent paralleling characteristics can be obtained. A maximum junction temperature Tj(max) = 175°C is achieved. The total power loss in sine-wave PWM inverter application is reduced by approx. 20% compared to 5th generation. Thus – compared to conventional products – the new 6th Generation NX-Series follows the demand for a higher efficiency in power conversion to save resources and energy.

Mitsubishi NX-Series IGBT modules feature a high power cycling capability (wire bond fatigue) and more than a tenfold better thermal cycling capability (solder fatigue) in comparison with the previous module technology. For thermal protection an isolated NTC thermistor is included in all standard NX-modules.

Multiple configuration options such as duals, six- and seven-packs and CIB (converter-inverter-brake) circuit configurations, ranging from 35A to 1000A at 1200V and 50A to 600A at 1700V are realized with two package footprints only: 122 x 62mm and 122 x 122mm. The new 6th Generation NX-Series IGBTs are ideally suited for general purpose inverters, servo control as well as photo-voltaic and fuel cell inverters with improved manufacturability, reduced development time, and lower cost.

First samples of 1200V modules will be available in summer 2009. A 600V line-up is under preparation.