650V IGBTs increase power conversion efficiency

Built using ST's third generation of trench-gate field-stop low-loss technology, the M-series IGBTs feature a new trench gate and a specially designed P-N-P vertical structure that together deliver the best trade-off between conduction and switch-off losses and significantly improve the overall performance of the devices. A short-circuit withstand time of 6µs minimum at 150°C starting junction temperature, the extended maximum operating junction temperature of 175°C, and a wide Safe Operating Area (SOA) extend service lifetime and boost reliability in applications where high power dissipation is required.

Furthermore, the devices are available in packages that include a new generation of free-wheeling diodes optimissed for fast recovery whilst maintaining a low forward drop and a high level of softness. This provides excellent EMI protection while reducing switch-on losses. The positive V_CE(sat) temperature coefficient, together with tight parameter distribution, enables the devices to be safely paralleled for even higher power requirements.

Complementing ST's HB series of 650V IGBTs for higher-frequency industrial applications (up to 60kHz), the M series units are available in 10 and 30A current ratings in a selection of power packages including the TO-220, D2PAK, and TO-247 LL long-lead. All devices are in full production, with pricing starting at $1.00 for the 10A STGP10M65DF2 in a TO-220 package for orders of 1000 pieces.