650V fast body diode MOSFETs increase voltage headroom

5th May 2016

Vishay

Nat Bowers

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Expanding its portfolio of fast body diode n-channel power MOSFETs, Vishay Intertechnology has announced a series of 650V fast body diode MOSFETs. The EF series devices (SiHx21N65EF, SiHx28N65EF and SiHG33N65EF) provide additional voltage headroom for industrial, telecomms and renewable energy applications when desired.

Built on E series superjunction technology, the 650V fast body diode MOSFETs feature a 10 times lower reverse recovery charge than standard MOSFETs. This allows the devices to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress and increasing reliability in zero voltage switching / soft switching topologies such as phase-shifted bridges, LLC converters and 3-level inverters.

The 21A SiHx21N65EF is offered in five packages, while the 28A SiHx28N65EF and 33A SiHG33N65EF are each available in two. The devices feature low on-resistance down to 157, 102 and 95mΩ, respectively, and ultra-low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecomms power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, external EV charging stations and LED, High-Intensity Discharge (HID) and fluorescent ballast lighting.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are RoHS-compliant and halogen-free.