40 and 60V MOSFETs based on trench semiconductor process
Based on the company’s latest generation U-MOS-IX-H trench semiconductor process, Toshiba Electronics Europe has announced new 40 and 60V power MOSFETs. The TK3R1P04PL, TK4R4P06PL and TK6R7P06PL N-channel MOSFETs can be driven by 4.5V logic levels and offer ultra-low maximum on resistance (RDS(ON)) ratings down to just 3.1mΩ (at VGS = 10V).
Supplied in compact DPAK packaging, the devices are suitable for high-efficiency power conversion applications including AC/DC and DC/DC converters, power supplies and motor drives.
The TK3R1P04PL is a 40V MOSFET with a maximum RDS(ON) of 3.1mΩ and a maximum drain current (ID) rating of 58A (at a temperature of 25ºC).
The 60V TK4R4P06PL and TK6R7P06PL have respective maximum RDS(ON) and ID ratings of 4.4mΩ and 58A and 6.7mΩ and 46A.
All of the new MOSFETs are designed to operate with a low output charge to further optimise efficiency and performance.
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