200V MOSFETs target motor control and DC/DC converters

20th December 2017

IXYS

Alice Matthews

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Datasheet

A new power semiconductor product line has been announced by IXYS: 200V Ultra-Junction X3-Class HiPerFET Power MOSFETs. The current ratings range from 36-300A; a broad selection of devices are available in a number of international standard packages. Fabricated using a charge compensation principle and IXYS’ own process technology, these new MOSFETs exhibit what the company claims to be the lowest on-state resistances in the industry (3.5mΩ in the SOT-227 package and 4mΩ in the TO-264, for example).

Along with gate charges as low as 21nC, these devices enable highest power densities and energy efficiencies in a wide variety of high-speed power conversion applications.

The fast body diodes of the devices are optimised and have low reverse recovery charge and time, thereby suppressing transients and enabling low-noise, high-efficiency power switching. Their low reverse recovery charge and time also boost efficiencies. In addition, these new MOSFETs are avalanche capable and exhibit what the company claims to be superior dv/dt performance (up to 20V/ns).

Targeted applications include synchronous rectification, battery chargers for light electric vehicles (LEVs), motor control (48-110V systems), DC/DC converters, uninterruptible power supplies, electric forklifts, inverters, power solid state relays, and Class-D audio amplifiers.

The new 250V X3-Class Power MOSFETs with HiPerFET body diodes are available in the following international standard size packages: TO-3P, TO-220 (overmolded or standard), TO-247, PLUS247, TO-252, TO-263, TO-264, TO-268HV, SOT-227.

Some example part numbers include IXFP36N20X3, IXFA72N20X3, IXFH90N20X3 and IXFN300N20X3, with current ratings of 36, 72, 90 and 300A, respectively.