100V MOSFET reduces voltage ringing and EMI
Delivering improvements in efficiency, reduced voltage ringing and lower EMI are promised for power supplies, motor drives and other applications requiring a 100V MOSFET. Fairchild has added the FDMS86181, 100V, shielded n-channel MOSFET to its PowerTrench range.
The primary advantages according to the company are a 40% reduction in Rds (ON) which lowers conduction losses and its minimised gate charge (Qg) which reduces switching losses. The exceptionally low Qrr virtually eliminates the voltage overshoots that cause ringing, says the company, which allows for the reduction or elimination of snubbers in product designs, and reduces EMI. This allows designers to reduce product size and bill-of-materials costs.
Fairchild: PCIM 2016 – Hall 9 - 342