TVS diodes deliver low capacitance & low dynamic resistance

6th September 2016

Toshiba

Nat Bowers

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The continuous growth of data traffic - driven by smartphones, wearables and applications such as VR and the IoT - leads to increasing numbers of high-speed interfaces that typically require protection against ESD events. To address this demand, Toshiba Electronics Europe has released ESD protection diodes based on its 4th gen ESD diode array process (EAP-IV), which uses Toshiba’s proprietary snapback technology.

The DF2B5M4SL, DF2B6M4SL, DF10G5M4N and DF10G6M4N offer protection for high-speed interfaces including USB 3.1 applications. A choice of operating voltages (3.6 and 5.5V) and packages (SOD962 and DFN10) provides flexible options for realising ESD protection in a variety of designs.

Thanks to Toshiba’s new process, the four devices simultaneously deliver low capacitance, low dynamic resistance and high ESD endurance. Minimum signal distortion of high-speed data signals is guaranteed by the ultra-low capacitance of 0.2pF, while a typical dynamic resistance of RDYN=0.5Ω ensures low clamping voltages. High ESD protection levels are supported as electrostatic discharge voltages of at least ±20kV according to IEC61000-4-2 are guaranteed.

The DF2BxM4SL devices are particularly suitable for mounting on high component density PCBs as the SOD-962 package requires a footprint of only 0.62x0.32mm and can be placed close to ICs that need ESD protection. In case of the DF10GxM4N types, the DFN10 package can be simply placed on top of a 4-bit bus line. This flow-through design supports simple bus routing on the PCB as no additional stubs are needed to connect single TVS diodes.