Silicon ESD devices help protect from ESD and surges

The new-generation SESD products come in both uni-directional and bi-directional configurations and are one, two and four-channel devices. They are available in tiny 0201and 0402 sizes and standard flow-through packages. In addition to offering 20kV contact discharge, the devices’ surge capability (2.2A for four-channel array and 2.5A for one- and two-channel devices) help provide more robust performance.

The SESD devices’ input capacitance of 0.15pF (bi-directional) and 0.30pF (uni-directional), at the high frequency spectrum, helps meet USB, HDMI, eSATA and other high-speed signal requirements. Their low clamping voltage of less than 15V helps facilitate fast turn-on time and minimise energy let-through to sensitive down-stream chipsets. Moreover, the very low leakage current of 50nA of the SESD devices helps reduce power consumption in applications where energy savings is imperative.

Design engineers are well aware that providing ESD (electrostatic discharge) protection according to the IEC’s 61000-4-2 standard can fall short when guarding against the more severe damage caused by charged board events. These extremely strong surge events are distinguished by a high peak current and fast rise time and can damage the I/O ports of smartphones, tablets, automotive infotainment devices and other sensitive electronics.

Nicole Palma, Product Manager, TE Circuit Protection, commented: “When working with design engineers we found that the IEC’s standard for ESD protection didn’t address the real problem of charged board events, or CBEs, that can result in product failures. Rising to this challenge, we enhanced our existing line of small, low-cap SESD devices to provide 20kV and higher surge capabilities. This more robust protection helps manufacturers increase product reliability and minimise field returns - key considerations in the fiercely competitive computing, mobile, consumer and automotive markets.”