NXP introduces ESD protection device for USB 3.0 and eSATA

NXP Semiconductors today announced the availability of a new ESD protection device, the IP4284CZ10, for high speed differential interfaces such as USB 3.0 and eSATA. The IP4284CZ10 offers the industry’s lowest differential crosstalk with excellent line-to-line capacitance matching and straight-through routing for optimized signal integrity. The IP4284CZ10 delivers 8kV of contact ESD protection which is at level 4 according to the IEC61000-4-2 standard.

USB 3.0 and eSATA transmit and receive simultaneously and have unique signal integrity requirements for ESD devices that have not existed with half-duplex or unidirectional high speed interfaces such as USB 2.0, HDMI and DisplayPort. The IP4284CZ10 was optimized in order to meet the dual requirements of matching capacitance, while maintaining low crosstalk between differential pairs and cost benefits of a single silicon die. This minimizes the signal skew and data errors on sensitive receivers when an adjacent transmitter channel is active.

“SuperSpeed USB is now adopted by the major players in the computing industry and customers show a high interest in ESD protection for the new data lines. The IP4284CZ10 is already being used by customers for their latest computers,” says Stefan Seider, product marketing manager, Integrated Discretes, NXP Semiconductors.

A complete design-in package is available, which includes layout recommendations, eye diagrams, crosstalk measurements, which are summarized in an USB 3.0 application note. The IP4284CZ10 is available either in the leadless SOT1059 (1.0 x 2.5 x 0.5 mm) or in the leaded TSSOP10 package (3.0 x 3.0 x 1.1 mm), which are both Pb-free and RoHS compliant.

Benefits of IP4284CZ10-TB are:

* Designed for SuperSpeed USB (USB 3.0), eSATA, and other high-speed interfaces
* Very low differential crosstalk (-70dB @ 2.5GHz)
* Excellent line to line capacitance matching of 0.05 pF (typical)
* Extremely low channel capacitance of 0.5pF (typical), in the range of 0-5V independent of the bias voltage
* Extremely wide pass-band up to 8GHz.
* Very low clamping voltage and dynamic resistance.