Passives
IXYS Introduces an Anode Gated Thyristor Technology Platform
The first product derived from this new Technology Platform is the CLB30I1200HB, a 30 ampere, 1200 volt single thyristor in a TO-247 discrete package. The gate control of the CLB30I1200HB is connected to the anode side of the silicon die instead of to the cathode side, as done in a standard thyristor.
The The AGT platform has similar electrical specification as the standard thyristor and is not limited to the 1200V/30A ratings of the CLB30I1200HB. In the future, various die sizes with higher and lower current/voltage ratings are planned to complete the AGT product portfolio. This new Thyristor Platform is made possible by IXYS’ known and proven thyristor technologies and in-house production methods.
Several applications are targeted by the Anode Gated Thyristor for example: line rectifying, soft-starters, motor control, AC power/lighting and temperature control. Generally, power control applications that use TRIACs, or thyristors are ideal for the use of this AGT, with simplified design and better performance.