1,200V SiC Schottky diodes offer low switching losses

23rd May 2017

Alice Matthews

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The first GEN2 Series of 1,200V Silicon Carbide (SiC) Schottky diodes has been introduced by Littelfuse, in conjunction with the start of the PCIM Europe 2017 Exhibition. These SiC diodes are the first in a series of products based on the technology platform created through a partnership with Monolith Semiconductor. Additional silicon carbide products based on the technology platform, including 1,200V SiC MOSFETs, are already in the pipeline and are scheduled for introduction in the near future.

GEN2 SiC Schottky Diodes are available in ratings of 1,200V at currents from 5-10A in either TO 220-2L or TO-252-2L packages. Compared to standard silicon bipolar power diodes, they allow circuit designers to reduce switching losses and enable increases in the efficiency and robustness of power electronics systems. They can accommodate large surge currents without thermal runaway, and operate at higher junction temperatures than their silicon counterparts. They also offer stored capacitive charge and forward voltage drop.

Typical applications for GEN2 Series SiC Schottky Diodes include power factor correction (PFC), buck/boost stages in DC/DC converters, free-wheeling diodes in inverter stages (switch-mode power supplies, solar, UPS, industrial drives) and high-frequency output rectification - wherever improvements in efficiency, reliability, and thermal management are desired. Designers and manufacturers of industrial power supplies, solar inverters, industrial drives, welding and plasma cutting equipment and EV/HEV charging stations will find them particularly useful.

“The merged p-n Schottky (MPS) device architecture of these new silicon carbide Schottky diodes offers circuit designers enhanced surge capability and extremely low leakage,” said Michael Ketterer, Product Marketing Manager, Power Semiconductors at Littelfuse. “Compared to conventional silicon power diodes, these silicon carbide Schottky diodes boost converter efficiency and power density while helping to reduce system-level costs.”

Key features:

Capacitive stored charge and negligible reverse recovery make them well-suited for high-frequency power switching. They also ensure negligible switching losses and reduced stress on the opposing switch.
Forward voltage drop ensures low conduction losses.
A maximum junction temperature of 175°C provides for a larger design margin and relaxed thermal management requirements.