Package technology decreases on-resistance in battery MOSFETs

The package technology is designed for applications such as smartphones, tablets, and thin notebooks where typically higher charging current makes low electrical resistance preferable. Initially available are the AOCR32326 and AOCR36330 30V common drain dual N-channel MOSFETs. They have a maximum resistance of 2.6mΩ at 10V, 2.9mΩ at 8.0V and 4.2mΩ at 4.2V (AOCR32326) and 1.4mΩ at 10V, 1.6mΩ at 8.0V and 2.9mΩ at 4.5V (AOCR36330). 

In standard wafer level chip scale packaging (WL- CSP), the substrate can be a significant portion of the total resistance on the back-to-back MOSFETs, explains the company. A thinner substrate leads to reduced resistance and mechanical strength and increases stress during the PCB assembly reflow process. This can lead to die warpage or die crack.

Instead, RigidCSP technology is used for high aspect ratio CSP die size and is claimed to reduce warpage or breakage during the manufacturing process.

The AOCR32326 is supplied in a 6.0 x 2.5mm package and the AOCR36330 package measures 6.22 x 2.5mm.

Both are immediately available in production quantities with a lead-time of 14 to16 weeks. The unit price for 1,000 pieces is $1.44 and $1.50, respectively.

Alpha and Omega Semiconductor (AOS) designs and develops a range of power semiconductors, including power MOSFET, IGBT, IPM, TVS, HVIC, SiC/GaN, IC and digital power products. It has developed intellectual property (IP) to introduce products to address the increasingly complex power requirements of advanced electronics. The company integrates discrete and IC semiconductor process technology, product design, and advanced packaging expertise to develop high-performance power management solutions for portable computers, flat-panel TVs, LED lighting, smartphones, battery packs, consumer and industrial motor controls, and power supplies for TVs, computers, servers, and telecommunications equipment.