Opto Diode releases high gain silicon photodiode-preamplifier

2nd March 2010

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Datasheet

AP Technologies is pleased to announce the international release of Opto Diode Corporation’s ODA-6W-500M which combines a high responsivity 6mm² active area silicon photodiode with a 500 MOhm preamplifier. The standard red/NIR-enhanced device has a responsivity of 315V/µW (typ.) at 940nm – visible enhanced versions can also be supplied. This high performance device has a frequency response of 100Hz (min.) with a low Offset Voltage of ±2mV (max.) and Dark Offset Noise of 500µV rms.

/> The ODA-6W-500M operates from ±5 to ±15V and is supplied in a hermetically sealed TO-39 can with operating and storage temperature ranges of -25°C to +100°C.

Martin Sharratt - Managing Director of APT said “the ODA-6W-500M is an exciting addition to Opto Diode’s range of detector-preamplifiers as it offers systems designers very high sensitivity in combination with low noise. The ODA-6W-500M is ideally suited to applications n the low pW region where discrete detector and preamplifier solutions lack the required sensitivity”.

Applications for these devices are low-light-level (less than 1 mW) tasks where electrical noise can affect the photodiode signal if the detector and amplifier are separate components on a circuit board. Typical examples are medical diagnostics; test & measurement; fluorescence detection and spectroscopy.

The ODA-6W-500M is manufactured at Opto Diode’s state-of-the-art facility in Newbury Park, California in their Class 1000 cleanroom and high volume fully-automated packaging facility.