Optoelectronics
InAsSb Infrared Detector for High Sensitivity Measurements in the 5 µm Spectral Band
Hamamatsu Photonics introduce the world’s first commercially available Indium Arsenide Antimonide (InAsSb) detector, the P11120-901. The new detector provides peak sensitivity in the 5 µm infrared spectral band and operates over the entire range from 1.6 µm to 5.8 µm. This high sensitivity is realised via Hamamatsu’s unique crystal growth technology. The InAsSb photodiode used in the P11120-901 has a planar structure which ensures a high speed response and high reliability. A typical rise time of 200 ns has been achieved with this detector structure.
TypiThe P11120-901 is not limited to a peak sensitivity of 5 µm, and Hamamatsu are able to shift the peak sensitivity to longer wavelengths by altering the composition ratio of As and Sb in the detector. This means Hamamatsu can offer a tailor made InAsSb solution for your application.
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