Wideband transistor is optimised for DC-2.7GHz operation

Providing customers with 50V operation, 16dB of gain and 60% drain efficiency at 1500MHz, this 100% RF tested HEMT D-Mode transistor is available in an industry standard plastic package with bolt down flange. The NPT2024 is ideally suited for defence communications, land mobile radio, avionics, wireless infrastructure, ISM applications and UHF/L-band radar.

Delivering performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology, 4th gen GaN (Gen4 GaN) is positioned to break the final technical and commercial barriers to mainstream GaN adoption. Gen4 GaN delivers greater than 70% peak efficiency and 19dB gain for modulated signals at 2.7GHz, which is similar to GaN on SiC technologies, and more than 10% greater efficiency than LDMOS. It also delivers power density that is more than four times that of LDMOS.

“The technical performance of MACOM’s NPT2024 complements our expanding GaN portfolio, which offers the industry with a broad GaN offering boasting high performance, gain, efficiency and affordability,” said Gary Lopes, Senior Product Director, MACOM.