Weebit Nano to demo ReRAM technology on 22FDX platform

Weebit will demonstrate its embedded ReRAM module on the advanced 22nm fully depleted silicon on insulator (FD-SOI) process at embedded world 2024. The demo confirms the capability of ReRAM in this advanced geometry – a process node where embedded flash is unable to scale. It also highlights some of the numerous capabilities of Weebit ReRAM, including ultra-low power consumption, fast programming time and byte addressability.

The 8Mb Weebit ReRAM demo chip in 22nm has the largest memory capacity of any Weebit module to-date and is implemented in the most advanced process so far. Testing of the chip has been underway since end of last year, when Weebit received the first 22nm wafers integrating its embedded ReRAM.

Coby Hanoch, CEO of Weebit Nano, said: “This new demonstration is a testament to the scalability of our ReRAM, and our team’s ongoing efforts to achieve the best possible performance. We have been able to achieve such performance through a combination of analog and digital design prowess as well as physics and materials expertise. The Weebit engineering teams are focused on continuous technology enhancements, which are critical as we look towards rolling out a commercial solution in 22nm – the industry’s most common process node.”

Demonstration at embedded world

Customers can see the new demo in Weebit’s booth #4-658 (Hall 4) at embedded world 2024, being held in Nuremberg, Germany, April 9-11, 2024.