UFS devices make use of 64-layer 3D flash memory

29th November 2017

Toshiba

Alice Matthews

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Datasheet

Toshiba Memory Europe has started sampling Universal Flash Storage (UFS) devices using Toshiba Memory's 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The new line-up will be available in four capacities: 32, 64, 128 and 256GB. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5x13mm package.

The controller performs error correction, wear levelling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.

All four devices are compliant with JEDEC UFS Ver2.1, including HS-GEAR3, which has a theoretical interface speed of up to 5.8Gbps per lane (x2 lanes = 11.6Gbps) while also suppressing any increase in power consumption.

Sequential read and write performance of the 64GB device are 900 and 180MB/s, while the random read and write performance are around 200% and 185% better, respectively, than those of previous generation devices.

Due to its serial interface, UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device.