Memory

SQI interfaces provide the 'industry's fastest' erase times

11th March 2015
Siobhan O'Gorman
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A family of SQI (Serial Quad I/O) interface SuperFlash memory devices has been introduced by Microchip. The SST26VF family is comprised of a 16Mb model, a 32Mb model and a 64Mb model, all of which have been manufactured using Microchip’s CMOS SuperFlash technology.

According to the company, the SuperFlash technology allows the devices to provide the fastest erase times in the industry. Sector and block erase commands are completed in just 18ms, and a full chip erase operation is completed in 35ms. Competing devices require 10 to 20 seconds to complete a full chip erase operation, making the SST26VF memory devices approximately 400 times faster. These fast erase times can provide a significant cost savings to customers, by minimising the time required for testing and firmware updates, and therefore increasing their manufacturing throughput.

The SST26VF devices are low pin-count, high-speed 104MHz quad-bit address and data multiplex I/O serial interfaces, which allow for high data throughput in a small package. The devices enable low-latency execute-in-place capability with minimal processor buffer memory, reducing the overall design footprint compared to traditional parallel memory interfaces. The memory devices provide faster data throughput than comparable x16 parallel Flash devices, without the associated high cost and high pin-count of parallel Flash. The SST26VF devices also offer full command-set backward compatibility for the ubiquitous SPI protocol.

Designed for low power consumption, the memory devices are suitable for energy-efficient embedded systems. Standby current consumption is 15µA typical, and the active read current at 104MHz is 15mA typical. The combination of 3V operation with low power consumption and small-form-factor packaging makes the SST26VF devices an excellent choice for applications such as servers, printers, cloud computing systems, HDTV, internet gateways, appliances, security systems and a broad range of embedded systems.

The devices also offer excellent quality and reliability, with 100 years of data retention and device endurance of over 100,000 erase/write cycles. Enhanced safety features include software write protection of individual blocks for flexible data/code protection; the upper and lower 64Kb of memory are partitioned into smaller, 8Kb sectors that can both read- and write-lock. In addition, the memory devices include a one-time programmable 2Kb Secure ID area, consisting of a 64-bit, factory-programmed unique ID and a user-programmable block. These features protect against unauthorised access and malicious read, programme and erase intentions. The SST26VF devices also include a JEDEC-compliant serial flash discoverable parameter table, which contains identifying information about the functions and capabilities of the devices for simpler software design.

The three-member SST26VF family is available now for sampling and volume production in multiple package options, including 8-pin SOIC and SOIJ, 16-pin SOIC, 8-contact WDFN and 24-ball TBGA, as well as in die and wafer form. The family comprises the 16-Mbit SST26VF016B; the 32-Mbit SST26VF032B and the 64-Mbit SST26VF064B.

 

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