Fast async SRAM operates at 8ns access time

12th August 2014

Mick Elliott

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Datasheet

A 4 Mbit, static RAM device engineered using Cypress Semiconductor’s high-performance CMOS technology is organised as 524,288 words by 8 bits and provides a high-speed, maximum access time of 8 ns and offers easy memory expansion with CE and OE features. The CY7C1049CV33 Fast Async SRAM is now in stock at Mouser Electronics. Available in a 44-pin TSOP II package, this RoHS-compliant device is an ideal choice for memory in a wide variety of applications.

It offers easy memory access via an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the SRAM is accomplished by taking the Chip Enable (CE) and Write Enable (WE) inputs LOW.

Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the CY7C1049CV33 is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH.

Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

With an operating temperature of 0°C to +70°C, a maximum voltage rating of 3.6V, and a low active power rating of 360mW (max.), the Cypress CY7C1049CV33 is a perfect option for many low power commercial and industrial applications.

Other features of the SRAM include automatic power down when deselected, 2.0V data retention, and easy memory expansion.