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Microchip expands Serial Quad I/O family with 3V 32-Mbit SQI serial Flash memory

21st June 2011

ES Admin

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Microchip just announced that it has expanded its Serial Quad I/O (SQI) Flash memory family with the new 3V, 32-Mbit SQI Flash memory, SST26VF032. Building on the success of the SST26 Series family, the 4-bit, multiplexed I/O SST26VF032 features an enhanced serial-interface architecture that provides low-power, high-performance and flexible data/code-protection schemes. With an 80 MHz operating frequency and a specialised instruction set, the SST26VF032 targets execute-in-place (XIP) applications, allowing programmes to be stored and executed directly from the Flash memory. This increases overall system performance without the need for code shadowing on a RAM device. The SST26VF032’s compact 6 mm x 5 mm, 8-pin WSON and 8-pin SOIC package options reduce board space and lower system costs. This device is ideal for a wide variety of applications, such as mobile handsets, DVD and Blu-ray™ players, printers, digital TVs, network appliances, GPS devices, DSL and cable modems, smart meters and more.

The SST26VF032 meets customer demand for high-performance, low power consumption and reliable Flash memory. The device features industry-leading low latency and burst-mode operation, which allows code execution in burst snippets to fill cache-line buffers and maximise system bandwidth in applications without RAM. Additionally, the device features index memory operation, which accelerates memory data access without the need to load an entire address. These features combine to enable true XIP performance.

The device’s proprietary, CMOS SuperFlash technology increases manufacturing throughput by enabling an industry-leading typical programme time of 1 ms, and a typical erase time of 18 ms. The device also offers enhanced security features, including block protection, block-protection lockdown and a one-time programmable area, which protect against unauthorised access and malicious read, programme and erase events.

The SST26VF032 features an active typical read current of 12 mA, a typical standby current of 8 mA and a low maximum leakage current of 1 mA, which combine to extend battery life in handheld and portable applications. Additionally, SST26VF032 has an endurance rate of 100,000 erase/write cycles, with a minimum of 100 years of data retention, providing a long product life and low failure rates.

The SST26VF032 is available in a 6 mm x 5 mm, 8-pin WSON or SOIC package and Samples are available today. Developers can begin designing with the SST26VF032 Flash memory, using Verilog and IBIS models, which can simulate the SST26VF032’s behaviour in the system.