Memory device boasts flexible read/write options

With an operating voltage range from 2.7 to 3.6V, fast read and programme times, and advanced protection features this parallel Flash memory excels in a variety of applications. The memory is partitioned into uniform 32 KWord and non-uniform 8 KWord blocks, offering flexible erase capabilities and seamless partitioning for programme code and data.

The SST38VF6401B parallel Flash memory offers high performance with flexible read and write options, including random read access time of 70 ns; page read access time of 25 ns; erasing sectors and blocks as fast as 18 ms; erasing the entire Flash memory chip in 40 ms; a word-programming time of 7 µs; and a write-buffer programming time of 1.75 µs, typical. The device offers superior reliability of 100,000 endurance cycles, typical, and greater than 100 years of data retention. The active read current of these devices is only 25 mA, typical, at 5 MHz, and standby current is only 5 µA, typical. The SST38VF6401B also provides various levels of protection and security features such as Security-ID, hardware boot-block protection, individual block protection, password protection, and irreversible block locking.

This device excels in a broad range of applications, including those in the consumer, automotive and industrial markets. Examples of ideal end applications include set-top boxes, multi-functional printers, digital televisions, as well as audio, video and infotainment products for automobiles. Additionally, this parallel Flash memory device is well suited for use in networking and industrial applications, such as gateways, switches and industrial control equipment.

The SST38VF6401B devices are available today for sampling and volume production, in 48-pin TSSOP and 48-ball TFBGA packages.