Memory

Flash devices perform full chip erase in 35ms

19th January 2015
Barney Scott
0

Offering 4 and 8Mb of memory respectively, Microchip's SST26WF040B and SST26WF080B devices have been announced, extending the company's 1.8V Serial Quad I/O (SQI) SuperFlash Memory range. These devices are manufactured with Microchip’s high-performance SuperFlash technology, providing superfast erase times and high reliability.

The SST26WF080B/040B provide the fastest erase times of any competing device due to the use of SuperFlash technology, according to Microchip. Sector and block erase commands are completed in just 18ms, and a full chip erase operation is completed in 35ms.  Competing devices require in the range of 5-15s to complete a full chip erase operation, making SST26WF080B/040B approximately 300 times faster. The fast erase times have the potential to provide significant cost savings to customers by minimising the time required for testing and firmware updates, therefore allowing increased manufacturing throughput.

The SQI interface is a high-speed 104MHz quad I/O serial interface which allows for high data throughput in a low pin-count package. This interface enables a low latency eXecute-In-Place (XIP) capability, allowing programmes to be stored and executed directly from the Flash memory and eliminating the need for code shadowing on a RAM device. The SST26WF080B/040B provides faster data throughput than a comparable x16 parallel Flash device without the associated high cost and high-pin count of parallel Flash. The SQI interface also offers full command-set backwards compatibility to the traditional SPI protocol.

Designed for low-power consumption, the SST26WF080B/040B helps to maximise battery life in portable powered applications. Standby current consumption is 10µA typical and a deep power-down mode further reduces current consumption to 1.8µA typical.  Active read current at 104MHz is 15mA typical. The combination of 1.8V operation with low-power consumption and small form factor packaging makes the SST26WF080B/040B suitable for applications such as mobile handsets, Bluetooth headsets, GPS, camera modules, hearing aids and any battery-powered device.

The SST26WF080B/040B offers excellent quality and reliability with 100 years of data retention and device endurance of over 100,000 erase/write cycles. Enhanced safety features include software write protection of individual blocks for flexible data/code protection and an OTP 2 Kbyte Secure ID area, offering protection against unauthorised access and malicious read, programme and erase intentions.  The device also includes a JEDEC-compliant Serial Flash Discoverable Parameter table, which contains identifying information about the function and capability of the SST26WF080B/040B in order to simplify software design. 

The SST26WF080B/040B devices are available for sampling and volume production in 8-contact WSON (6x5mm), 8-lead SOIC (150mm), 8-contact USON (2x3mm) and 8-ball XFBGA (Z-Scale) packages.

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