Memory
Micron Announces Its First Fully Functional DDR4 DRAM Module
Micron Technology, Inc. today announced development of its first fully functional DDR4 DRAM module. The company has begun sampling and has received feedback from major customers to support quick implementation for applications in 2013.
It iCodeveloped by Nanya and based on Micron's 30-nanometer (nm) technology, the 4-gigabit (Gb) DDR4 x8 part is the first piece of what is expected to be the industry's most complete portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, 3DS, SODIMMs and UDIMMs (standard and ECC). For the soldered down space, x8, x16, and x32 components will also be available, with initial speeds up to 2400 megatransfers per second (MT/s), increasing to the JEDEC-defined 3200 MT/s.
With the JEDEC definition for DDR4 very near finalization, we've put significant effort into ensuring that our first DDR4 product is as JEDEC-compatible as it can be at this final stage of its development, said Brian Shirley, vice president for Micron's DRAM Solutions Group. We've provided samples to key partners in the market place with confidence that the die we give them now is the same die we will take into mass production.
As JEDEC finalizes the DDR4 specifications, Micron is positioned to quickly become fully compliant with its 30nm 4Gb DDR4 part. Full sampling to key partners began earlier this year and volume production is planned for 4Q12.