Memory

Cervoz offers value-added technology, Anti-Vibration Fill, to enhance the robustness of their DRAM modules. The new technology is available exclusively from Display Solutions in the UK. In real-world industrial computing applications, embedded devices are installed in harsh environments with constant shock or vibrations. The RAM modules inside these devices may be vulnerable to these impacts, causing poor contact and connection.

As embedded intelligence is finding its way into ever more areas of our lives, fields ranging from autonomous driving to personalised medicine are generating huge amounts of data. But just as the flood of data is reaching massive proportions, the ability of computer chips to process it into useful information is stalling. Now, researchers at Stanford University and MIT have built a new chip to overcome this hurdle.

A prototype sample of 96-layer BiCS FLASH three-dimensional (3D) flash memory with a stacked structure has been developed by Toshiba Memory, with 3-bit-per-cell (triple-level cell, TLC) technology. Samples of the new 96-layer product, which is a 256 gigabit (32 gigabytes) device, are scheduled for release in the second half of 2017 and mass production is targeted for 2018. The new device meets market demands and performance specifications for app...

  Toshiba Memory has announced development of the what it claims to be the world’s first BiCS FLASH three-dimensional (3D) flash memory with a stacked cell structure. The newest BiCS FLASH device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.

  Non-volatile memory products specialist Anvo-Systems Dresden, has provided samples of the ANV32C81ASE66nvSRAM (non-volatile SRAM) for an extended temperature range of -40 to 105°C and the ANV32C81ASA66nvSRAM even for -40 to 125°C.

A family of 15,000rpm enterprise performance hard disk drives for mission critical servers and storage has been announced by Toshiba Electronics Europe (TEE). With a new 900GB capacity model, the AL14SX series HDD series features a 50% capacity increase and superior performance and power savings compared to Toshiba’s prior AL13SX generation. The AL14SX series is available in 300, 600 and 900GB capacities in a compact 2.5", 15mm form-fa...

A new die revision (B die) for Alliance Memory's 2Gb and 4Gb devices in the 96-ball FBGA package has been announced, in order to address the memory market's shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs. TJ Mueller, Vice President of Marketing at Alliance Memory, said: "Market demand for DDR3 and DDR3L SDRAMs is extremely high due to their increased functionality and speed, but their availability is becoming more an...

Imec has announced at the 2017 Symposia on VLSI Technology and Circuits the world’s first demonstration of a vertically stacked ferroelectric Al doped HfO2 device for NAND applications. Using a new material and a novel architecture, imec has created a non-volatile memory concept with attractive characteristics for power consumption, switching speed, scalability and retention.

A new system regulator IC has been launched by Toshiba Electronics Europe (TEE) that is designed to handle the increasing sophistication of car audio systems. The TCB010FNG is a fully-featured solution, incorporating the required power supply and all essential detection functions. TCB010FNG incorporates a multi-rail microcontroller power supply that retains power during minor interruptions in the battery supply. The device also includes mult...

The successful development of a new low-power SRAM circuit technology has been announced by Renesas Electronics. The technology can be embedded in application specific standard products (ASSPs) for Internet of Things (IoT), home electronics, and healthcare applications. The new technology provides a function for switching dynamically, with a low power overhead, between active operation, in which the CPU core performs read and write operations of ...