Memory

Ramtron has announced the availability of its 4-megabit (Mb) F-RAM memory in a streamlined FBGA package. The FM22LD16 is a 4Mb, 3-volt, parallel nonvolatile RAM in a 48-pin ball grid array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM22LD16 targets industrial control systems such as robotics, network and data storage applicati...

Microchip has announced a family of 8- and 32-kByte stand-alone serial SRAM devices designed to increase a system’s available RAM through adding small, inexpensive external devices. The 23A640, 23K640 (23 x 640), 23A256 and 23K256 (23 x 256) devices feature a familiar, industry standard SPI interface, providing increased design flexibility while reducing design and production costs.

Toshiba Corporation, IBM, and AMD have announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world’s smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).

Microchip has announced a family of serial EEPROM devices with built-in EUI-48 and EUI-64 compatible MAC addresses. Designed to work on standard buses, such as SPI, I2C and the UNI/O bus, the devices provide easy and inexpensive access to MAC addresses and feature up to 1.5Kbit of EEPROM that can be used for storing configuration and user settings, or as a scratch-pad area for buffering small amounts of data.

Toshiba Electronics Europe (TEE) has reinforced its memory card line-up with the launch of a 16GB microSDHC card offering the largest capacity available in the market. At the same time, the company extended its range of industry-leading memory card solutions by adding ultra fast read/write 8GB and 16GB SDHC cards to its line-up. Mass production of the new SDHC cards will start in December, with production of the new microSDHC due to start in Janu...

Ramtron International has announced the second serial device in a family of new F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The FM25V05 is a 512-kilobit (Kb), 2.0V to 3.6V, serial peripheral interface (SPI) nonvolatile RAM in an 8-pin SOIC package that features fast access, NoDelay writes, 1E14 read/write cycles, and low power consumption. The FM25V05 is an ideal alternative ...

Ramtron International Corporation today launched the first parallel device in a family of new parallel and serial F-RAM products that offer higher-speed read/write performance, lower voltage operation, and optional device features. The newest device in Ramtron’s V-Family of F-RAM products is the FM28V100, a 1-megabit (Mb), 2.0V to 3.6V, parallel nonvolatile RAM in a 32-pin TSOP-I package that features fast access, NoDelay™ writes, virtually u...

Renesas Technology Europe today announced that it has commenced development of low power and fast SRAM products that are specifically suited to automotive applications. They are available as 4, 16, or 32Mbit low power SRAM and 4Mbit fast SRAM devices. Sample shipments will commence during June 2009 followed by mass production during July 2009.

Toshiba has announced the launch of a new line-up of 43nm single-level cell (SLC) NAND Flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate monolithic 16Gb chips fabricated with 43nm generation process technology, the highest density chips available. The new devices will start to come to market in the first ...

Toshiba Electronics Europe has announced the introduction of a new range of USB flash memory drives that feature a redesigned case and a maximum memory capacity of 16GByte, double that of existing products. The stylish design is shorter than previous models and also more robust. The drives will be showcased at the GITEX Technology Week in Dubai.