8Gb LPDDR4 mobile DRAM for the premium mobile market

6th January 2014

Nat Bowers

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Samsung has introduced what the company believes to be the first eight Gb low power double data rate 4 (LPDDR4) mobile DRAM. Offering the highest level of density, performance and energy efficiency for mobile memory applications, the high-speed mobile DRAM enables end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life.

The LPDDR4 DRAM is targeted at high-performance network systems and the premium mobile market including large screen UHD smartphones, tablets and ultra-slim notebooks that offer four times the resolution of full-HD imaging.

Samsung's DRAM uses a low voltage swing terminated logic I/O interface in order to offer a data transfer rate per pin of 3,200 megabits per second. This is double that offered by the 20nm-class LPDDR3 DRAM currently in mass production. Consuming approximately 40% less energy at 1.1V, the LPDDR4 interface will provide 50% higher performance than the fastest LPDDR3 or DDR3 memory.

Fabricated on 20nm class process technology, the 8Gb LPDDR4 provides 1Gb on a single die. Samsung believes that this is the largest density available for DRAM components today and that with four of the 8Gb chips, a single 4GB LPDDR4 package can provide the highest level of performance available today.

Young-Hyun Jun, Executive Vice President, Memory Sales & Marketing, Samsung, commented: "This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market. We will continue introducing the most advanced mobile DRAM one step ahead of the rest of the industry so that global OEMs can launch innovative mobile devices with exceptional user convenience in the timeliest manner."