32-bit high-speed CMOS SDRAMs with 5.4ns access time

27th March 2014

Nat Bowers

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Expanding the company's portfolio of high-speed CMOS synchronous DRAMs (SDRAMs), Alliance Memory has introduced the 2m x 32 AS4C2M32S-6TIN, AS4C2M32S-6BIN and AS4C2M32S-7BCN; 4m x 32 AS4C4M32S-6TIN, AS4C4M32S-6BIN and AS4C4M32S-7BCN; and 8m x 32 AS4C8M32S-7BCN x32 devices in the 90-ball 8x13x1.2mm TFBGA, and 86-pin 400-mil plastic TSOP II packages.

These SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical, telecomms and networking products requiring high memory bandwidth. For these applications, the devices feature fast access time from clock down to 5.4ns.

The devices provide programmable read or write burst lengths of one, two, four, eight or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximise performance.

The AS4C2M32S-6TIN, AS4C2M32S-6BIN, AS4C4M32S-6TIN, AS4C4M32S-6BIN, and AS4C8M32S-7BCN are the latest in Alliance Memory's full line of high-speed SDRAMs, which includes devices with densities of 16, 64, 128, 256 and 512Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages.

Samples and production quantities of the CMOS SDRAMs are available now, with lead times of six to eight weeks for large orders.