256M CMOS SDRAMs are offered in 86-Pin TSOP II packages

28th June 2016

Barney Scott

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Datasheet

Alliance Memory has extended its offering of 256M high-speed CMOS synchronous DRAMs (SDRAM) with two x32 devices in the 86-pin, 400mm, plastic TSOP II package. Internally configured as four banks of 8M word x 32 bits, the high-density AS4C8M32S-6TIN and AS4C8M32S-7TCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical and networking products requiring high memory bandwidth.

The SDRAMs offer a synchronous interface, operate from a single +3.3V (±0.3V) power supply, and are lead (Pb)- and halogen-free. The devices released today feature fast access time from clock down to 5.4ns and clock rates to 166MHz, and they are available in commercial (0 to +70°C) and industrial (-40 to +85°C) temperature ranges.

The SDRAMs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

The AS4C8M32S-6TIN and AS4C8M32S-7TCN are the latest in Alliance Memory's full line of high-speed SDRAMs, which includes components with densities of 16, 64, 128, 256, and 512Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages. For Alliance Memory customers, the devices eliminate costly redesigns by providing long-term support for end-of-life components. In addition, the company doesn't perform die shrinks, which frees up engineering resources.