1Mb SPI FRAM device offered in a WL-CSP

8th July 2015

Fujitsu

Jordan Mulcare

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Fujitsu Semiconductor Europe has launched an ultra small package for the 1Mb SPI FRAM device. The eight-pin WL-CSP is an additional package variant to the existing product MB85RS1MT. In comparison to the industry standard SOP-8 package, the WL-CSP package, which measures 3.09x2.28x0.33mm, reduces the surface mounting area by 77% and the device height by 80%.

The WL-CSP package makes FRAM the suitable non-volatile memory solution for wearable and sensor applications. These fast expanding markets request ultra small device dimensions, extremely low power consumption for maximum battery lifetime and high endurance in write cycles in case of real time logging.

While conventional non-volatile memories like EEPROM or Flash memory are covering an endurance of the range of only 1m write cycles, the MB85RS1MT FRAM device provides an endurance of 10tn read/write cycles, allowing a flexible storage of real time logging data. In contrast to the block access of EEPROM and Flash, FRAM can be overwritten fast and flexibly into each memory cell without any waiting time. As a result, FRAM consumes much lower energy in the writing access and contributes a great deal to extend the battery lifetime, especially for wearable/sensor applications with frequent logging functions.

Finally the miniature eight-pin WL-CSP package, which is only 5% of the mounting volume of SOP-8, allows the customers to realise more miniature applications. The MB85RS1MT device operates in the voltage range of 1.8–3.6V and guarantees a data retention of 10 years at 85°C. The operation temperature ranges from -40 to +85°C. This device is being offered in SOP-8 and eight-pin WL-CSP packages.