Silicon SPDT switch offers crucial advantages over GaAs

22nd May 2015

Analog Devices

Barney Scott

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Datasheet

Analog Devices has introduced an absorptive SPDT switch specified for the 9kHz to 13GHz frequency band, with high isolation of 48dB and low insertion-loss of 0.6dB at 8GHz operation. The HMC1118LP3DE is the first offering within ADI’s RF and microwave control product portfolio to exhibit the inherent advantages of silicon process technology, which offers critical advantages over legacy GaAs RF switches.

These advantages include a settling time that is one hundred times faster than GaAs, robust ESD protection (2000V vs. 250V compared to GaAs), and the ability to extend the switch’s low frequency-end one thousand times lower than GaAs while maintaining high linearity.

The HMC1118LP3DE also offers industry-leading RF power handling of 4W in through and 0.5W in hot-switching operating modes. Hot-switching power handling is more than two times better than competitive parts with similar RF bandwidth, which allows engineers to increase allowed RF power in their applications and systems without the risk of damage to the part.

The HMC1118LP3DE is optimised for high-isolation and extremely flat transfer characteristics within a wide operating frequency range up to 13GHz, while maintaining high signal fidelity down to 9kHz. The combination of features suits the switch for demanding test and measurement, automated test equipment, defence electronics, and wireless communication applications as a lower cost alternative to legacy GaAs switches.

Utilising a non-reflective 50Ω design, the switch provides positive control of 0/+3.3V and power settling time of 7.5μs for 0.05dB of final RF output level. The unit, in a 3x3mm QFN SMT package, boasts 35.5dBm through-terminal-path and 27dBm terminated-path and hot switching case high-power handling, and ESD rating of 2kV HBM.