RFMD Announces 500 Watt GaN L-Band Amplifier

7th June 2013

ES Admin

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RF Micro Devices introduce the RFHA1027 gallium nitride matched power transistor delivering industry-leading pulse power performance of 500W in a compact flanged package at L-Band. RFMD's new amplifier is optimized for pulsed power applications requiring efficiency and compact size. It operates from 1.2 GHz to 1.4 GHz and provides 500W of pulsed RF power from a 50 Volt supply.

The RFHA1027 also offers high gain of 16.5 dB and high efficiency of 55 percent. The RFHA1027 is housed in a small form factor package of 24mm by 17.4 mm, and is input and output matched to 50 ohms, efficiently minimizing external components. In addition, the package leverages RFMD's advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.

The RFHA1027 targets new and existing radar architectures requiring ruggedness and reliability. The introduction of RFHA1027 follows the previous release of RFHA1020 (280W L-Band) and RF3928 (280W S-Band).

RFMD is pleased to introduce this new device with industry-leading power performance in support of diverse-end markets, said Jeff Shealy, vice president and general manager of RFMD's Power Broadband business unit. RFMD's GaN product portfolio clearly demonstrates our continued commitment to technology and product leadership, and we look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and 'green' power consumption advantages.

Availability

RFMD is showcasing a broad portfolio of industry-leading RF components at the International Microwave Symposium 2013 in Seattle, Washington at Stand 730. Samples and production quantities are available now through RFMD's online store or through local RFMD sales channels.