RF WLAN FEM extends mobile device and router ranges

25th November 2013

Nat Bowers

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Datasheet

Microchip has today introduced a new 2.4 GHz, 50 ohm matched RF WLAN front-end module for Bluetooth, 802.11b/g/n and 256-QAM Wi-Fi applications. Designated the SST12LF09, it integrates a transmitter power amplifier, a receiver low-noise amplifier, and a low-loss, single-pole three-throw antenna switch for Bluetooth connectivity.

Ideal for high-data-rate wireless applications, the SST12LF09 features high linear output power of up to 15 and 17 dBm for 1.8% dynamic EVM at 3.3V and 5V, respectively; and 17 and 18.5 dBm linear power for 3% EVM at 3.3V and 5V, respectively.

With a 12 dB gain and a greater than -6 dBm input compression level, the receiver in the LNA bypass mode has a 9 dB loss and an 8 dBm input compression level. Providing excellent transmit power at the maximum 256-QAM data rate, the SST12LF09 FEM significantly extends the range of IEEE 802.11b/g/n WLAN systems.

For the designers of mobile devices, multi-channel access point/routers and set-top boxes it is essential to achieve the maximum data rate, longest range and highest integration in a small package. With a small package size and extra output power at 5V bias, the SST12LF09 enables designers to reduce the board size and complexity of their designs while boosting their products’ output power. It also features an easy-to-use 50 ohm on-chip input and output match, accelerating time-to-market.

Offered in a compact 2.5 mm x 2.5 mm x 0.4 mm 16-pin QFN package, the SST12LF09 is available today for sampling and volume production. Evaluation boards for the new SST12LF09 front-end module are also available.