RF switch offers high isolation & linearity

22nd October 2014

IDT

Siobhan O'Gorman

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Datasheet

Providing a combination of low insertion loss, high isolation and linearity, the F2912 RF switch has been introduced by Integrated Device Technology. Achieving broad bandwidth without sacrificing performance, the device operates over a frequency range from 300KHz to 8GHz. The switch provides low path loss without compromising isolation performance with a low IL of 0.4dB.

Ensuring rugged operation for a variety of applications, the device has a P1dB of 30dBm which provides 1W compression point. Providing consistence with FPGA and MCU logic levels, the switch features 3.3 and 1.8V control logic. To reduce intermodulation distortion, it has a high OIP3 of +64dBm. For high reliability in harsh thermal environments, the device operates from -55 to 125°C.

The F2912 RF switch is suitable for base stations (2G, 3G and 4G), microwave backhaul and front haul, test equipment, CATV headend, WiMAX radios, wireless systems and general switching applications.

“We expect LTE technology to comprise 90% of all RF base station system shipments by 2018,” said Earl Lum, President of EJL Wireless Research. “The continuing evolution of LTE technology calls for high-linearity, high-performance chips, placing IDT in a strong position to differentiate itself with its unique products and RF capabilities.”

“The F2912 represents IDT’s entry into the RF switch market, where it integrates seamlessly with our other leading RF products to provide engineers a reliable and efficient development path,” said Chris Stephens, Senior Director of Wireless Product Definition and Marketing, IDT. “With its set of high-performance metrics, the F2912 is ideal for a multitude of wireless and other RF applications.”