RF gallium nitride transistor operates up to 2700 MHz
Richardson RFPD is offering availability and full design support capabilities for a new RF-power, gallium nitride transistor from NXP Semiconductors.
The MMRF5018HSR5 is a 125-watt, continuous wave, RF power transistor optimised for wideband operation up to 2700 MHz.
It includes input matching for extended bandwidth performance.
Key features include:
- High power density
- Decade bandwidth performance
- Enhanced thermal resistance packaging
- Power gain: 12.0 dB
- Drain efficiency: 64.4% (typ.)
- High ruggedness: > 20:1 VSWR
With its wideband capabilities, high gain, ruggedness and drain efficiency, the MMRF5018HSR5 offers a complete solution for multiband communication applications.
It is also versatile for a range of CW, pulse and wideband RF applications.
An evaluation board is available.
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