NXP Introduces New Plastic Packages for RF Power Transistors

NXP���s OMP roadmap covers all the high-volume frequency ranges and applications: 10 – 500-MHz ISM, 470 860-MHz broadcast, 700 – 2200-MHz GSM, WCDMA telecom, 2300 – 2700-MHz LTE telecom, 2.45 GHz ISM, and even products for the 2700 – 3500-MHz S-band. Product types will extend to all existing categories: discrete pre-drivers (2.5 – 10 W), drivers (20 – 45 W), MMICs (20 – 60 W), finals (50 - 200 W) and integrated Doherty devices (50 – 110 W).

OMP products up to 10 W will utilize NXP’s existing IC packages, with new footprint packages developed for higher powers. For customers using full surface mount assembly, gull-wing versions will be available in addition to traditional straight-lead versions. A limited selection of devices is available today as engineering samples, with volume production scheduled to start in Q4 2011.

Product Features

* Product solutions from DC to 3500 MHz
* Single-stage broadband drivers in HVSON, from 2.5 to 10W
* Single-stage drivers from 25 to 45 W
* Dual-stage MMICs from 20 to 60 W which can be used as high-gain drivers or combined as low power dual-stage Doherty amplifiers
* Fully integrated plug-and-play Doherty PAs in a single package (50 to 110 W)
* SOT502-sized, single-ended and push-pull final transistors ranging from 50 to 200 W

Supporting Quote

* “Compared to ceramic, overmolded plastic can significantly reduce the overall BOM cost by 20 percent, offering customers a clear choice in cost versus performance. As a complement to our existing product portfolio, the new OMP RF power devices give design engineers added flexibility and demonstrate our ongoing commitment to RF power,” said Mark Murphy, director of RF power products, NXP Semiconductors.