Integrated gate driver/MOSFET module suits high speed switching

The IXZ631 modules feature the IXRFD630 high speed gate driver paired with an RF power MOSFET, packaged in IXYSRF’s DE-Series low-inductance surface mount RF package, incorporating layout techniques to minimise stray lead inductance for optimum switching performance.  Designed with small internal delays, the modules are suitable for high power operation where combiners are used. Their features and wide safety margin in operating voltage and power make the modules unmatched in performance and value.

Two devices are available, the IXZ631DF12N100 1,000V, 12A device and the 500V, 18A IXZ631DF18N50. Both modules produce voltage rise and fall times of less than 5ns, and minimum pulse widths of 8ns. In pulsed mode the 500V module provides up to 95A of peak current, whilst the 1,000V module provides 72A.

The devices in the IXZ631 series feature an isolated substrate, with an isolation voltage in excess of 2,500V, excellent thermal transfer and increased temperature and power cycling capabilities. A low RDS_(ON) is complemented by a very low insertion inductance and low quiescent current, and latch-up protection is provided.

Available now, the RoHS compliant devices are beryllium oxide-free.

“We are excited to release the next-gen RF module for power applications. Featuring the high speed IXRFD631 driver and IXYSRF power MOSFET in a single low-inductance package offers an excellent combination of power, size and performance,” commented Stephen Krausse, General Manager, IXYS Colorado.