Gallium Nitride MMIC PA for 6 to 18 GHz applications

Oerating between 6 and 18 GHz, the amplifier typically provides 20 dB of small signal gain and +40 dBm of saturated output power. Featuring RF I/Os that are matched to 50 Ohms for ease of use, the HMC7149 GaN MMIC amplifier draws 680 mA quiescent current from a +28V DC supply.

Ideal for integration into high power density Multi-Chip-Module and subsystem applications, the new MMIC power amplifier provides high output power capability, a compact die size and simplified biasing.

All electrical performance data was aquired with the die eutectically attached to 1.02 mm thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.

Typical applications for the HMC7149 GaN MMIC power amplifier include test instrumentation, general communications, and radar. Key features include high Psat of +40 dBm, power gain at Psat of +10 dB, high output IP3 of +39.5 dBm, small signal gain of 20 dB, supply voltage of +28V @ 0.680 A, 50 Ohm matched Input/Output, and a die size of 3.4 x 4.5 x 0.1 mm².