Frequency
GaAs MESFET suits military, hi-rel SWaP designs
RFMW announces availability of discrete devices from Microwave Technology (MwT).
The MwT-9F70 GaAs MESFET delivers 26.5 dBm P1dB at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.
Small signal gain is 11 dB.
Offered in a -70 ceramic package, the MwT-9F70 can be used in military and hi-rel SWaP designs and is also available in DIE and other packaged configurations, all with MTBF values better than 1×108 hours at 150 degrees C channel temperature.
Featured products
MAX17793
Analog Devices Inc.
3V to 80V, 3A, High-Efficiency, Synchronous Step-Down DC-DC Converter
| SKU: | MAX17793 |
|---|---|
| Stock: | 9316 |
| Cost: | $3.64 |
MAX22516
Analog Devices Inc.
IO-Link Data Link Controller with Transceiver and Integrated DC-DC
| SKU: | MAX22516 |
|---|---|
| Stock: | 8000 |
| Cost: | $5.42 |
