Board enables demonstration of RF MOSFET gate drivers
Providing a building block for high-speed power circuit development, the DVRFD630 and DVRFD631 RF MOSFET Gate Driver Development Boards from IXYS are designed to demonstrate the performance of the IXRFD630 and IXRFD631 RF MOSFET gate drivers.
Factory assembled and tested, two board configurations are available for either the IXRFD630 or IXRFD631 RF MOSFET gate driver - a DE150- or DE275-size MOSFET can be mounted on one board configuration, while the second configuration has a larger footprint pad for a DE375- or DE475-size device. The board design allows both the driver and the MOSFET to be attached to a heat sink, allowing the assembly to be used as a ground-referenced, low-side power switch for both single-ended and push-pull topologies.
Operation of the DVRFD630/631 Development Boards is straightforward, requiring only a 5V compatible input signal and 12V to 15V DC power supply. With a small overall board size, the optimized layout also reduces parasitic inductance.
The boards can be used to demonstrate the IXRFD630 or IXRFD631 RF MOSFET gate drivers, applied as a low-side ground-referenced power switch, or used as a building block for single-ended and push-pull topologies.