NXP Unveils Extremely Rugged LDMOS RF Power Transistor

##IMAGE_1_R##The BLF188XR is capable of providing an outstanding 1600 W of peak output power and can operate as high as 60 V, and still pass extreme ruggedness testing. Other key features include stronger integrated ESD protection allowing the BLF188XR to be used in a Class C mode of operation, and several enhancements that make the XR device easy to design in and tune in multiple applications.

Another interesting feature of the BLF188XR is its excellent linearity, making it a very interesting candidate for high-power linear applications. The BLF188XR is ideal for large-scale industrial, scientific and medical applications in frequency ranges under 300 MHz, while the popular BLF578XR series is recommended for frequency ranges up to 500 MHz. NXP is showcasing the BLF188XR this week at the IEEE MTT-S International Microwave Symposium.

“Our ‘eXtremely Rugged’ family now delivers even more ruggedness to run with the most awkward RF loads – easily outperforming VDMOS performance, ruggedness and reliability using NXP’s latest high-voltage LDMOS technology,” said Mark Murphy, director of marketing, RF power business line, NXP Semiconductors. “Building on the success of the BLF578XR, the new BLF188XR extends our portfolio, and brings extra ruggedness, linearity, power and simplicity in design. And building on our proven track record as a leading RF power supplier in ISM markets, we’ve been able to design the BLF188XR as a highly compelling solution for a broad range of low-frequency applications, such as lasers, MRI, RF lighting and RF drying, as well as VHF/FM broadcast transmitters.”

Engineering samples of the BLF188XR are now available to qualified customers.