Analog Devices integrated 1-Watt, 2-stage driver amplifiers cover entire cellular frequency range

The highly-integrated ADL5605 amplifier (covering the 700 MHz to 1000 MHz frequency range) and ADL5606 driver amplifier (operating in the 1800 MHz to 2700 MHz range) are pin-compatible, easy-to-tune and integrate two stages of gain, thereby saving significant board space when compared to traditional discrete designs. Furthermore, the new RF driver amplifiers integrate internal active biasing and a fast shutdown function for applications that require a power saving mode, or for applications such as wireless energy metering that transmit intermittently. These high-performance broadband RF driver amplifiers are well-suited for a variety of wired and wireless applications including cellular infrastructure; industrial, science, and medical- (ISM) band power amplifiers; defense and instrumentation equipment.

The ADL5605 and ADL5606 provide extremely flat gain and very high output third-order intercept (OIP3) specifications across their tuned frequency range. These features eliminate the need to compensate for gain loss elsewhere in the signal chain while enabling the signal strength to be increased, without compression, prior to the power amplifier stages. The ADL5605 provides an extremely flat gain of 23 dB, a P1dB of 31.1 dBm, an OIP3 of 44.3 dBm and a noise figure of 4.8 dB at 943 MHz. The ADL5606 provides an extremely flat gain of 23.8 dB, a P1dB of 30.7 dBm, an OIP3 of 45.7 dBm and a noise figure of 4.8 dB at 2140 MHz. Both amplifiers require few external components for tuning, making these amplifiers easy to implement in a wide variety of applications. Furthermore, the new RF driver amplifiers offer low power consumption as the ADL5605 draws only 312 mA and the ADL5606 draws only 360 mA on a single 5-V supply.

* Stable over temperature, power supply and from device to device

* Internal active biasing and a robust ESD rating of ±1 kV (Class 1C)

* Fully specified for operation from −40°C to +85°C

* Packaged in a compact 4-mm × 4-mm, 16-lead LFCSP that uses an exposed paddle for excellent thermal impedance

* Fabricated on a GaAs HBT process