Frequency

Microsemi Corporation has announced a design guide for developing next-generation high-voltage, high-power systems based on the company's unique digital radio frequency (DRF) family of hybrid modules. These systems are used in applications including semiconductor processing, LCD glass coating, solar cell manufacturing, optical device and architectural glass coating, hazardous gas treatment, CO2 laser excitation, MRI RF amplifiers, RF scalpels and...

MSC now offers the VT-803 Temperature Compensated Crystal Oscillator (TCXO) from Vectron International. The new VT-803, provided in a 5.0 mm x 3.2 mm x 1.5 mm ceramic package, features high stability of 100 ppb and an excellent close in phase noise.

Crystek's CVCO55CC-3475-3475 VCO (Voltage Controlled Oscillator) operates at 3475 MHz with a control voltage range of 0.5V~4.5V. This VCO features a typical phase noise of -115 dBc/Hz @ 10KHz offset and has excellent linearity. Output power is typically +7 dBm.

MSC now offers the new VS-401 VCSO (Voltage Controlled Saw Oscillator) from Vectron International. A key feature of the VS-401 is an ultra-low 12 femtoseconds (fsec) root mean square (rms) jitter over the entire bandwidth from 12 kHz to 20 MHz.

RF Micro Devices, Inc. has unveiled the highly integrated RF6555 ZigBee® front end module (FEM). The RF6555 is RFMD's newest ZigBee FEM and is optimized for smart energy/advanced metering infrastructure (AMI) applications providing utilities and consumers more control over how they monitor and save energy. ZigBee is a global low power wireless networking standard for monitoring and control across a variety of applications, including energy manag...

RF Micro Devices, Inc. has announced the expansion of its multi-market product portfolio to include several point-to-point (P2P) radio chipsets targeting the growing cellular backhaul market. The highly integrated radio chipsets combine multiple RF/microwave radio front end components and expand RFMD's product portfolio to encompass all critical RF and IF functions in the P2P radio transceiver.

NXP Semiconductors N.V. has announced the launch of a complete line of overmolded plastic (OMP) RF power devices with peak powers ranging from 2.5 to 200 Watts. The new range of OMP devices will be introduced as a complement to NXP’s extensive range of products in ceramic packages, providing customers a choice for more cost-sensitive applications, while maintaining the required level of RF performance.

Designed for the toughest engineering environments, NXP Semiconductors N.V. has unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed tough-as-nails to withstand the harsh fault conditions often found in applications such as industrial lasers, metal etching and concrete drilling. Based on NXP’s industry-leading LDMOS technology, the XR family extends LDMOS into the few remaining domains that ...

NXP Semiconductors N.V. has introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations – allowing signal bandwidths up to 60MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers.

Analog Devices, Inc. have introduced two 1-watt, 2-stage RF driver amplifiers featuring the ability to cover the entire cellular frequency range used in wireless communications systems.