S-Band RF Power Transistor for Air Traffic Control Radar Aviation Applications

The 2729GN-500 transistor delivers unparalleled performance of 500W of peak power with 12 decibel (dB) of power gain and 53 percent drain efficiency over the band 2.7 to 2.9 gigahertz to provide the maximum power in a single device covering this band.

Key product features include:

• Standard pulse burst format: 100µs, 10 percent DF (microseconds)
• Excellent output power: 500W
• High power gain: >11.5 dB min
• Drain bias−Vdd: +65V
• Low thermal resistance: 0.2 degrees C/W

Systems benefits that are achieved with GaN on SiC high electron mobility transistor include:

•Single-ended design with simplified impedance matching, replacing lower power devices that require additional levels of combining;

•Highest peak power and power gain for reduced system power stages and final stage combining;

•Single stage pair provides 1.0 kilowatt peak output power with margin, four-way combined to provide full system 2 kW peak output power;

•High operating voltage at 65 volts reduce power supply size and DC current demand;

•Extremely rugged performance improves system yields; and

•Amplifier size is 50 percent smaller than devices built with silicon bipolar junction transistors or laterally diffused metal oxide semiconductor devices.

Packaging and Availability:
The 2729GN-500 is offered in a single-ended package and is built with 100 percent high-temperature gold metallization and wires in a hermetically solder-sealed package for long-term military reliability. Loaner demonstration units are available to qualified customers.