Richardson RFPD releases reference design for GaN HEMT

The A3G26D055N-100 is an orderable reference design for NXP’s A3G26D055NT4, a 100–2690 MHz, RF power discrete GaN HEMT housed in a DFN 7 mm x 6.5 mm over-moulded plastic package.

It has an unmatched output allowing for wide frequency range utilisation. The transistor is designed for cellular base station applications requiring wide instantaneous bandwidth capability.

The A3G26D055N-100 circuit optimises the device from 100–2500 MHz, with 12 W CW and 11 dB gain by utilising half of the device. The compact circuit (7 cm x 5 cm) is available for order from Richardson RFPD, and the circuit information is licensable from NXP.